Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO

Citation
Jm. Lee et al., Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO, APPL PHYS L, 78(24), 2001, pp. 3842-3844
Citations number
27
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
78
Issue
24
Year of publication
2001
Pages
3842 - 3844
Database
ISI
SICI code
0003-6951(20010611)78:24<3842:LANOCT>2.0.ZU;2-Z
Abstract
Low-resistance and nonalloyed ohmic contacts to epitaxially grown n-ZnO wer e fanned by exposing n-ZnO to an inductively coupled hydrogen and an argon plasma. Using Ti/Au, the specific contact resistivity of the ohmic contact was drastically decreased from 7.3 X 10(-3) to 4.3 X 10(-5) Ohm cm(2) by hy drogen plasma treatment. The photoluminescence spectrum of the hydrogen pla sma treated ZnO showed a large enhancement in band-edge emission and a stro ng suppression in deep-level emission. These results suggest that the low c ontact resistivity can be attributed to an increase in carrier concentratio n on the ZnO surface. The specific contact resistivity of the Ar-plasma tre ated sample was also decreased to 5.0 X 10(-4) Ohm cm(2), presumably due to the information of shallow donor on the ZnO surface by ion bombardment. (C ) 2001 American Institute of Physics.