Ultraviolet emission from a diamond pn junction

Citation
S. Koizumi et al., Ultraviolet emission from a diamond pn junction, SCIENCE, 292(5523), 2001, pp. 1899-1901
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Multidisciplinary,Multidisciplinary,Multidisciplinary
Journal title
SCIENCE
ISSN journal
0036-8075 → ACNP
Volume
292
Issue
5523
Year of publication
2001
Pages
1899 - 1901
Database
ISI
SICI code
0036-8075(20010608)292:5523<1899:UEFADP>2.0.ZU;2-I
Abstract
We report the realization of an ultraviolet Light-emitting diode with the u se of a diamond pn junction. The pn junction was formed from a boron-doped p-type diamond Layer and phosphorus-doped n-type diamond Layer grown epitax ially on the {111} surface of single crystalline diamond. The pn junction e xhibited good diode characteristics, and at forward bias of about 20 volts strong ultraviolet Light emission at 235 nanometers was observed and was at tributed to free exciton recombination.