In-situ monitoring of the growth of copper phthalocyanine films on InSb byorganic molecular beam deposition

Citation
Da. Evans et al., In-situ monitoring of the growth of copper phthalocyanine films on InSb byorganic molecular beam deposition, APPL SURF S, 175, 2001, pp. 374-378
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
175
Year of publication
2001
Pages
374 - 378
Database
ISI
SICI code
0169-4332(20010515)175:<374:IMOTGO>2.0.ZU;2-#
Abstract
Thin films of the organic semiconductor copper phthalocyanine (CuPc) have b een grown on the InSb(1 1 1)A 2 x 2 surface by organic molecular beam depos ition (OMBD). Soft X-ray photoelectron spectroscopy (SXPS) using synchrotro n radiation, low energy electron diffraction (LEED) and Raman spectroscopy have been applied to monitor the bonding and energy band line-up at the CuP c-InSb interface. LEED shows that the first layer of CuPc is ordered. SXPS data reveal that the chemical interaction between the overlayer and the sub strate is limited. The lineshapes of the shallow In and Sb core levels chan ge very little during the growth of the CuPc film. Emission from the valenc e states of both InSb and CuPc was also monitored and the valence band offs et for this hybrid system was determined to be (0.75 +/- 0.14) eV. Raman sp ectroscopy confirms the limited interaction at the junction and further rev eals that the structure of the CuPc film changes with increasing thickness. (C) 2001 Elsevier Science B.V. All rights reserved.