In-situ monitoring of the growth of copper phthalocyanine films on InSb byorganic molecular beam deposition

Evans, DA Steiner, HJ Middleton, R Jones, TS Chen, CH Horn, K Park, S Kampen, TU Tenne, D Zahn, DRT Patchett, A McGovern, IT

Da. Evans et al., In-situ monitoring of the growth of copper phthalocyanine films on InSb byorganic molecular beam deposition, APPL SURF S, 175, 2001, pp. 374-378

17

INGLESE

Article

Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering

APPLIED SURFACE SCIENCE

0169-4332 → ACNP

175

2001

374 - 378

ISI

0169-4332(20010515)175:<374:IMOTGO>2.0.ZU;2-#

Thin films of the organic semiconductor copper phthalocyanine (CuPc) have b een grown on the InSb(1 1 1)A 2 x 2 surface by organic molecular beam depos ition (OMBD). Soft X-ray photoelectron spectroscopy (SXPS) using synchrotro n radiation, low energy electron diffraction (LEED) and Raman spectroscopy have been applied to monitor the bonding and energy band line-up at the CuP c-InSb interface. LEED shows that the first layer of CuPc is ordered. SXPS data reveal that the chemical interaction between the overlayer and the sub strate is limited. The lineshapes of the shallow In and Sb core levels chan ge very little during the growth of the CuPc film. Emission from the valenc e states of both InSb and CuPc was also monitored and the valence band offs et for this hybrid system was determined to be (0.75 +/- 0.14) eV. Raman sp ectroscopy confirms the limited interaction at the junction and further rev eals that the structure of the CuPc film changes with increasing thickness. (C) 2001 Elsevier Science B.V. All rights reserved.