Positron study of defects in a-SixCl-x films produced by ion beam deposition method

Citation
M. Reinoso et al., Positron study of defects in a-SixCl-x films produced by ion beam deposition method, APPL SURF S, 177(1-2), 2001, pp. 96-102
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
177
Issue
1-2
Year of publication
2001
Pages
96 - 102
Database
ISI
SICI code
0169-4332(20010601)177:1-2<96:PSODIA>2.0.ZU;2-E
Abstract
Amorphous SixC1-x(a-SixC1-x) films with x ranging from 0 to 0.4 have been p roduced using a high energy ion beam deposition method. The resulting films have been characterized by Raman annihilation spectroscopy and positron an nihilation spectroscopy (PAS). Hardness and wear resistance have also been measured. It has been shown that the open volume defects and their distribu tion through the films have an important role in determining the mechanical behavior of the as-deposited and thermal treated films. (C) 2001 Elsevier Science B.V. All rights reserved.