Codoping effect of O-2 into Er-doped InP epitaxial layers grown by OMVPE

Citation
H. Ohta et al., Codoping effect of O-2 into Er-doped InP epitaxial layers grown by OMVPE, PHYSICA E, 10(1-3), 2001, pp. 399-402
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
1386-9477 → ACNP
Volume
10
Issue
1-3
Year of publication
2001
Pages
399 - 402
Database
ISI
SICI code
1386-9477(200105)10:1-3<399:CEOOIE>2.0.ZU;2-U
Abstract
The temperature dependence of ESR in InP:Er and the O-2 codoping effect in InP:Er have been studied by X-band ESR measurement at low temperature. The ESR at around g = 6, which corresponds to Er3+ site with T-d symmetry, lost it's intensity quickly as the temperature is increased and disappeared abo ve 12 K, The temperature dependence of the integrated intensity turned out to be different from simple Curie law. The intensity of the ESR at around g = 6 decreased as O-2 is codoped into InP:Er. No new ESR was observed in O- 2 codoped InP:Er in contrast to the results of O-2 codoped GaAs:Er. These r esults are discussed in connection with the O-2 codoping effect of photolum inescence spectra. (C) 2001 Elsevier Science B.V. All rights reserved.