Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemissionspectroscopy

Citation
J. Okabayashi et al., Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemissionspectroscopy, PHYSICA E, 10(1-3), 2001, pp. 192-195
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
1386-9477 → ACNP
Volume
10
Issue
1-3
Year of publication
2001
Pages
192 - 195
Database
ISI
SICI code
1386-9477(200105)10:1-3<192:ESOGSB>2.0.ZU;2-I
Abstract
We have studied the electronic structure of Ga1-xMnxAs by angle-resolved ph otoemission spectroscopy. The effect of Mn doping in GaAs was revealed as t he formation of new states near the Fermi level, which originate from the M n aceptor state, and are split from the valence-band maximum of the host Ga As. These states would be responsible for the anomalous transport propertie s of Ga1-xMnxAs. (C) 2001 Elsevier Science B.V. All rights reserved.