We have studied the electronic structure of Ga1-xMnxAs by angle-resolved ph
otoemission spectroscopy. The effect of Mn doping in GaAs was revealed as t
he formation of new states near the Fermi level, which originate from the M
n aceptor state, and are split from the valence-band maximum of the host Ga
As. These states would be responsible for the anomalous transport propertie
s of Ga1-xMnxAs. (C) 2001 Elsevier Science B.V. All rights reserved.