Control of material parameters and metal-insulator transition in (Ga,Mn)As

Citation
T. Hayashi et al., Control of material parameters and metal-insulator transition in (Ga,Mn)As, PHYSICA E, 10(1-3), 2001, pp. 130-134
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
1386-9477 → ACNP
Volume
10
Issue
1-3
Year of publication
2001
Pages
130 - 134
Database
ISI
SICI code
1386-9477(200105)10:1-3<130:COMPAM>2.0.ZU;2-C
Abstract
We show that low-temperature annealing after epitaxial growth greatly impro ves the crystalline quality of a diluted-magnetic-semiconductor (Ga,Mn)As. This technique is applied to the study of unique metal-insulator transition of this material. (C) 2001 Elsevier Science B.V. All rights reserved.