A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers

Citation
V. Svrcek et al., A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers, PHIL MAG L, 81(6), 2001, pp. 405-410
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE LETTERS
ISSN journal
0950-0839 → ACNP
Volume
81
Issue
6
Year of publication
2001
Pages
405 - 410
Database
ISI
SICI code
0950-0839(200106)81:6<405:ANATSP>2.0.ZU;2-Z
Abstract
A new approach to the surface photovoltage method is demonstrated on thick undoped microcrystalline silicon films grown on different substrates. The m odel, which includes top as well as bottom space-charge regions, gives a go od picture of rather complex experiments and allows good fitting of theoret ical curves to experimental results. This method gives us not only the diff usion length of minority carriers but also information on the existence and properties of the space-charge regions in the sample and the results are v erified by comparison with the standard procedure.