Charge collection efficiency of an irradiated cryogenic double-p silicon detector

Citation
K. Borer et al., Charge collection efficiency of an irradiated cryogenic double-p silicon detector, NUCL INST A, 462(3), 2001, pp. 474-483
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
462
Issue
3
Year of publication
2001
Pages
474 - 483
Database
ISI
SICI code
0168-9002(20010421)462:3<474:CCEOAI>2.0.ZU;2-C
Abstract
We present results on the measurement of the charge collection efficiency o f a p(+) /n/p(+) silicon detector irradiated to 1 x 10(15) n/cm(2), Operate d in the temperature range between 80 and 200 K. For comparison, measuremen ts obtained with a standard silicon diode (p(+) /n/n(+)), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detecto r shows a higher CCE regardless of the applied bias and temperature, beside s being symmetric with respect to the polarity of the bias voltage.