We present results on the measurement of the charge collection efficiency o
f a p(+) /n/p(+) silicon detector irradiated to 1 x 10(15) n/cm(2), Operate
d in the temperature range between 80 and 200 K. For comparison, measuremen
ts obtained with a standard silicon diode (p(+) /n/n(+)), irradiated to the
same fluence, are also presented. Both detectors show a dramatic increase
of the CCE when operated at temperatures around 130 K. The double-p detecto
r shows a higher CCE regardless of the applied bias and temperature, beside
s being symmetric with respect to the polarity of the bias voltage.