New type X-ray mask fabricated using inductively coupled plasma deepetching

Citation
D. Chen et al., New type X-ray mask fabricated using inductively coupled plasma deepetching, MICROSYST T, 7(2), 2001, pp. 71-74
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Instrumentation & Measurement
Journal title
MICROSYSTEM TECHNOLOGIES
ISSN journal
0946-7076 → ACNP
Volume
7
Issue
2
Year of publication
2001
Pages
71 - 74
Database
ISI
SICI code
0946-7076(200105)7:2<71:NTXMFU>2.0.ZU;2-P
Abstract
The fabrication of X-ray masks is a critical and challenging process in LIG A technique. As inductively coupled plasma (ICP) deepetching appears to be the most suitable source for deep silicon etching, we fabricated a new type X-ray mask using this technique. In comparison with other types of X-ray m asks, the mask we fabricated has the advantages of its low cost and its sim ple fabrication process. Desired microstructures have also been fabricated using this new type X-ray mask in LIGA technique.