Microstructural and optical properties of ZnO thin films grown on InSb (111) substrates

Citation
Tw. Kim et al., Microstructural and optical properties of ZnO thin films grown on InSb (111) substrates, J PHYS CH S, 62(7), 2001, pp. 1199-1203
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
0022-3697 → ACNP
Volume
62
Issue
7
Year of publication
2001
Pages
1199 - 1203
Database
ISI
SICI code
0022-3697(200107)62:7<1199:MAOPOZ>2.0.ZU;2-7
Abstract
ZnO thin films were grown on InSb (111) substrates with the goal of produci ng high-quality ZnO films and ZnO/InSb heterostructures. Atomic force micro scopy images showed that the root-mean-square average surface roughness of the ZnO film was 17.26 Angstrom , and X-ray diffraction measurements showed that the ZnO films grown on the InSb (111) substrates were preferential or ientation in the [0001] crystal direction. Anger electron spectroscopy and bright-field transmission electron microscopy measurements showed that the ZnO/InSb heterostructures had no significant intermixing problems and had r elatively sharp interfaces. The temperature dependence of the photoluminesc ence spectra showed dominantly the bound excition peaks at low temperature and the free exciton emission band at high temperature. These results indic ate that ZnO (0001) preferential orientation textural films grown on p-InSb (111) substrates at low temperature hold promise for potential high-speed optoelectronic devices based on InSb substrates. (C) 2001 Elsevier Science Ltd. All rights reserved.