Recovery dynamics in proton-bombarded semiconductor saturable absorber mirrors

Citation
Jt. Gopinath et al., Recovery dynamics in proton-bombarded semiconductor saturable absorber mirrors, APPL PHYS L, 78(22), 2001, pp. 3409-3411
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
78
Issue
22
Year of publication
2001
Pages
3409 - 3411
Database
ISI
SICI code
0003-6951(20010528)78:22<3409:RDIPSS>2.0.ZU;2-5
Abstract
Reduction of device response time, resulting from the proton bombardment of InGaAs/InP-based semiconductor saturable absorbers, was studied experiment ally using an ultrafast degenerate, cross-polarized pump-probe technique. P roton bombardment is shown to reduce device response times to similar to1 p s at low optical excitation densities. Under high excitation, the device dy namics are dominated by induced absorption. The extended recovery of highly excited carriers appears to be less sensitive to defects created by bombar dment. Mode locking was demonstrated with the proton-bombarded samples in a n erbium-doped fiber laser. (C) 2001 American Institute of Physics.