High-power AlGaInN flip-chip light-emitting diodes

Citation
Jj. Wierer et al., High-power AlGaInN flip-chip light-emitting diodes, APPL PHYS L, 78(22), 2001, pp. 3379-3381
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
78
Issue
22
Year of publication
2001
Pages
3379 - 3381
Database
ISI
SICI code
0003-6951(20010528)78:22<3379:HAFLD>2.0.ZU;2-1
Abstract
Data are presented on high-power AlGaInN flip-chip light-emitting diodes (F CLEDs). The FCLED is "flipped-over" or inverted compared to conventional Al GaInN light-emitting diodes (LEDs), and light is extracted through the tran sparent sapphire substrate. This avoids light absorption from the semitrans parent metal contact in conventional epitaxial-up designs. The power FCLED has a large emitting area (similar to0.70 mm(2)) and an optimized contactin g scheme allowing high current (200-1000 mA, J similar to 30-143 A/cm(2)) o peration with low forward voltages (similar to2.8 V at 200 mA), and therefo re higher power conversion ("wall-plug") efficiencies. The improved extract ion efficiency of the FCLED provides 1.6 times more light compared to top-e mitting power LEDs and ten times more light than conventional small-area (s imilar to0.07 mm(2)) LEDs. FCLEDs in the blue wavelength regime (similar to 435 nm peak) exhibit similar to 21% external quantum efficiency and simila r to 20% wall-plug efficiency at 200 mA and with record light output powers of 400 mW at 1.0 A. (C) 2001 American Institute of Physics.