Trap-free, space-charge-limited currents in a polyfluorene copolymer usingpretreated indium tin oxide as a hole injecting contact

Citation
Aj. Campbell et al., Trap-free, space-charge-limited currents in a polyfluorene copolymer usingpretreated indium tin oxide as a hole injecting contact, SYNTH METAL, 122(1), 2001, pp. 161-163
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
0379-6779 → ACNP
Volume
122
Issue
1
Year of publication
2001
Pages
161 - 163
Database
ISI
SICI code
0379-6779(20010501)122:1<161:TSCIAP>2.0.ZU;2-#
Abstract
We report time-of-flight, transient dark injection (DI) and current density versus voltage measurements on polyfluorene copolymer diode structures usi ng pretreated indium tin oxide: (ITO) as a hole injecting contact. For ITO exposed to an oxygen plasma, coated in poly(ethylenedioxythiophene)/polysty renesulphonic acid, or with both treatments, all measurements were entirely consistent with positive carrier, trap-free, space-charge-limited current theory. For untreated ITO, the behaviour is instead injection limited. (C) 2001 Elsevier Science B.V. All rights reserved.