Growth and stress analysis of necks for 300 mm CZ silicon single crystals

Citation
H. Tu et al., Growth and stress analysis of necks for 300 mm CZ silicon single crystals, MICROEL ENG, 56(1-2), 2001, pp. 89-92
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
0167-9317 → ACNP
Volume
56
Issue
1-2
Year of publication
2001
Pages
89 - 92
Database
ISI
SICI code
0167-9317(200105)56:1-2<89:GASAON>2.0.ZU;2-K
Abstract
Growth of large diameter necks is of great importance for 300 mm silicon si ngle crystals. Tensile tests for necks with different diameter have been ma de, and then the fracture morphology of the necks has been analyzed by scan ning electron microscopy (SEM). The surface morphology demonstrates that th e fracture is fragile. The large seeds can support crystals grown from larg e charge sizes of poly-silicon. It is indicated that the neck growth condit ions have certain effects on the tensile stress limit of the necks. The fra cture mechanism of necks has been discussed in the paper. (C) 2001 Elsevier Science B.V. All rights reserved.