The growth technology for 300 mm single crystal silicon

Citation
H. Tu et al., The growth technology for 300 mm single crystal silicon, MICROEL ENG, 56(1-2), 2001, pp. 77-82
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
0167-9317 → ACNP
Volume
56
Issue
1-2
Year of publication
2001
Pages
77 - 82
Database
ISI
SICI code
0167-9317(200105)56:1-2<77:TGTF3M>2.0.ZU;2-2
Abstract
The fabrication technique for 300 mm silicon single crystals and wafers is the central topic of silicon material research recently. The study on the g rowth technique of 300 mm silicon ingots has been developed in our institut e since 1997. The research mainly focuses on the following aspects: (1) pro cess conditions for fabrication of the dislocation-free silicon single crys tal; (2) oxygen content in the silicon crystals; (3) elimination of oxidati on-induced stacking faults (OSF) ring in the crystal. It is found that the hot zone configuration, parameters of growth process, magnetic field, heat shield and so on have an important effect on the perfection of crystals and the impurity concentration in the obtained crystals. The 300 mm silicon in gots can be obtained repeatedly. The impurities in the crystals can be effe ctively controlled. Effect of cusp magnetic field on the crystal growth has been investigated. The role of heat shield in hot zone has also been discu ssed. (C) 2001 Elsevier Science B.V. All rights reserved.