The charge collection and the resulting currents of electrons and holes in
silicon detectors are described well bp a simple model derived from the bas
ics of semiconductor theory. Depending on various parameters like resistivi
ty, bias voltage and thickness, we calculate the currents resulting from ch
arge movement across the detector. In heavily irradiated silicon detectors,
the bulk converts from n- to p-type and the pn-junction moves from the rea
dout side to the backplane side. Nevertheless. neglecting trapping due to r
adiation damage, it can be shown that the overall currents before and after
this inversion are the same although the single-carrier contributions are
quite different. Furthermore the detector currents are applied to a model o
f the APV amplifier with CR-RC sharing and deconvolution. The amplifier out
put is shown for several parameter settings. (C) 2001 Elsevier Science B.V.
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