A simple model of charge collection in silicon detectors

Citation
M. Friedl et al., A simple model of charge collection in silicon detectors, NUCL INST A, 461(1-3), 2001, pp. 192-196
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
461
Issue
1-3
Year of publication
2001
Pages
192 - 196
Database
ISI
SICI code
0168-9002(20010401)461:1-3<192:ASMOCC>2.0.ZU;2-J
Abstract
The charge collection and the resulting currents of electrons and holes in silicon detectors are described well bp a simple model derived from the bas ics of semiconductor theory. Depending on various parameters like resistivi ty, bias voltage and thickness, we calculate the currents resulting from ch arge movement across the detector. In heavily irradiated silicon detectors, the bulk converts from n- to p-type and the pn-junction moves from the rea dout side to the backplane side. Nevertheless. neglecting trapping due to r adiation damage, it can be shown that the overall currents before and after this inversion are the same although the single-carrier contributions are quite different. Furthermore the detector currents are applied to a model o f the APV amplifier with CR-RC sharing and deconvolution. The amplifier out put is shown for several parameter settings. (C) 2001 Elsevier Science B.V. All rights reserved.