Review on the development of cryogenic silicon detectors

Citation
L. Casagrande et al., Review on the development of cryogenic silicon detectors, NUCL INST A, 461(1-3), 2001, pp. 150-154
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
461
Issue
1-3
Year of publication
2001
Pages
150 - 154
Database
ISI
SICI code
0168-9002(20010401)461:1-3<150:ROTDOC>2.0.ZU;2-5
Abstract
In this paper, we report on the performance of heavily irradiated silicon d etectors operated at cryogenic temperatures. The results discussed here sho w that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one orde r of magnitude. In particular, a 400 mum thick "double-p" silicon detector irradiated up to 1 x 10(15) n/cm(2) delivers a mip signal of about 27 000 e lectrons when operated at 130 K and 500 V bias. The position resolution of an irradiated microstrip detector, and "in situ" irradiation of a pad detec tor during operation in the cold are also discussed. (C) 2001 Elsevier Scie nce B.V. All rights reserved.