The ohmic character of doped AlN films

Citation
M. Okamoto et al., The ohmic character of doped AlN films, DIAM RELAT, 10(3-7), 2001, pp. 1322-1325
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
1322 - 1325
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<1322:TOCODA>2.0.ZU;2-D
Abstract
Conducting AlN films were fabricated on sapphire substrates by doping carbo n and oxygen simultaneously using a two-beam pulsed laser deposition (two-b eam PLD) technique. The AlN/O + C films were conductive semiconductors with a resistivity of 10(5) Omega cm. These films are transparent to eyes and h ad an absorption edge of 230 nm. On the other hand, AlN films incorporated by either pure carbon or pure oxygen at the same concentration were insulat ors. At an oxygen content of 10 at.%, the conductivity of the AlN/O + C fil ms was increased with an increase in carbon incorporation. According to X-r ay diffraction analysis, the AlN/O + C films had a different crystalline st ructure than the stoichiometric AlN films. (C) 2001 Elsevier Science B.V. A ll rights reserved.