Bond modification of BCN films on Ni substrate

Citation
Yk. Yap et al., Bond modification of BCN films on Ni substrate, DIAM RELAT, 10(3-7), 2001, pp. 1137-1141
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
1137 - 1141
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<1137:BMOBFO>2.0.ZU;2-E
Abstract
We show that the composition for boron-carbon-nitrogen (BCN) ternary films can be tailored by controlling the quantities of the carbon and BN plumes t ogether with the use of in situ nitrogen ion bombardment. At 800 degreesC, BCN films with composition of BC2N are obtained on Si (100) substrates. How ever, Fourier transformed infrared (FTIR) and X-ray photoelectron spectrosc opy (XPS) measurements indicate that these films are carbon doped BN compou nds (BN:C), in which, phase separation of the carbon and BN phases occurred . On the other hand, hybridized BCN films can be deposited on Ni substrates under similar synthesis conditions. In such a case, the carbon and BN phas es are hybridized through the carbon nitride and boron carbide bonds. These films appeared in fibrous nanostructures as observed by field emission sca nning electron microscopy (FESEM). Evidence indicates that the Ni substrate acts as a sink for the carbon and forces the carbon composites to grow on top of the B and N atoms. By this means, bond hybridization between the car bon and BN phases occurred. (C) 2001 Elsevier Science B.V. All rights reser ved.