A study of microstructure and nanomechanical properties of silicon incorporated DLC films deposited on silicon substrates

Citation
Jf. Zhao et al., A study of microstructure and nanomechanical properties of silicon incorporated DLC films deposited on silicon substrates, DIAM RELAT, 10(3-7), 2001, pp. 1070-1075
Citations number
30
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
1070 - 1075
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<1070:ASOMAN>2.0.ZU;2-5
Abstract
Silicon incorporation into DLC films prepared by plasma enhanced chemical v apour deposition (PECVD) was studied by a combination of surface analysis m ethods and nanomechanical measurements; namely XPS, Raman spectroscopy and nanoindentation. Addition of silicon into the films leads to an increase in the sp(3) contribution, as measured from XPS analysis, and a decrease in t he Raman band intensity ratio I-G/I-G. These changes are consistent with an evolving C-C bond network. The mechanical properties were first studied as a function of film thickness and indentation depth to assess the effect of substrate proximity. Silicon incorporation produces films with lower hardn ess and Young's modulus. It is suggested that, for such a PECVD process, th e weakening of the mechanical properties is caused by the increased hydroge n content in the doped films, as shown by the increased Raman background sl ope, These tendencies are attributable to the development of polymer-like c hains, which weakens the inter-molecular structure of the films. (C) 2001 E lsevier Science B.V. All rights reserved.