Ionoluminescence in CVD diamond and in cubic boron nitride

Citation
C. Manfredotti et al., Ionoluminescence in CVD diamond and in cubic boron nitride, DIAM RELAT, 10(3-7), 2001, pp. 568-573
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
568 - 573
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<568:IICDAI>2.0.ZU;2-3
Abstract
Using the new ion beam-induced luminescence (IBIL) apparatus in National Le gnaro Laboratories, Italy, a series of measurements concerning both wide-ar ea luminescence spectra and monochromatic luminescence maps with a space re solution of a few mum has been carried out on several CVD diamond and c-BN samples. Protons of 2 MeV with a penetration depth of approximately 25 mum have been used in order to investigate the materials in the bulk. These mea surements have been correlated with particle-induced X-ray emission (PIXE) and EPR data. The measurements have been performed at increasing proton dos es in order to also investigate the radiation hardness of luminescence peak s. The results indicate that ionoluminescence of CVD diamond is dominated b y three bands at approximately 2, 2.4 and 2.9 eV, with the intermediate ban d being very radiation-hard, and the other two radiation-weak. The band at 2 eV is correlated with N content, and is particularly high in samples with poor electronic properties. IBIL in c-BN is also dominated by three bands, one at approximately 2 eV, and the other two at higher energies with respe ct to CVD diamond. All these three bands seem to be relatively radiation-ha rd with respect to CVD diamond, and to be related to defects induced by dop ing. (C) 2001 Elsevier Science B.V. All rights reserved.