Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B accepters

Citation
C. Uzan-saguy et al., Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B accepters, DIAM RELAT, 10(3-7), 2001, pp. 453-458
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
453 - 458
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<453:HDIBAB>2.0.ZU;2-C
Abstract
Drastic differences in diffusion of H (deuterium) in diamond, B-doped by io n implantation and during homo-epitaxial film growth, and its influence on electrical properties are found by SIMS depth profiling, and by electrical (Hall effect) measurements. Type IIa natural diamond, B-doped by ion implan tation and high quality homo-epitaxial B-doped diamond films were subjected to D plasma treatment under similar conditions. The results of SIMS measur ements clearly show a huge difference in D diffusion profile for these two samples. While the sample doped during growth was totally deuterated, the i mplanted one showed only minor D penetration. Electrical measurements indic ated that while the homo-epitaxial samples became insulating or showed stro ng decrease in their free hole concentration following deuteration, the ide ntical treatment to the B-ion implanted sample caused only slight changes i n electrical properties. The electrical properties and their dependence on annealing are correlated with the deuterium diffusion into diamond. A possi ble mechanism of (B, H) and (defect, H) pair formation is suggested as a po ssible explanation of the observed differences. (C) 2001 Elsevier Science B .V. All rights reserved.