Low temperature excitation spectrum of phosphorus in diamond

Citation
E. Gheeraert et al., Low temperature excitation spectrum of phosphorus in diamond, DIAM RELAT, 10(3-7), 2001, pp. 444-448
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
444 - 448
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<444:LTESOP>2.0.ZU;2-7
Abstract
A set of n-type diamond thin films was investigated by infrared absorption spectroscopy from 4 K to 300 K. The films were grown by CVD on {111} synthe tic diamond, and phosphorus-doped using from [P]/[C] = 100 to 1000 ppm of p hosphine in the gas phase during growth. The phosphorus concentration in th e films ranges from approximately 5 x 10(17) cm(-3) to 5 X 10(18) cm(-3). A t low temperature new absorption peaks were observed for the first time, an d attributed to the 3P(+/-) excited state: of phosphorus and phonon-assiste d electronic transitions. The energy of this new excited state is in accord ance with the effective mass approximation, confirming the shallow level be haviour of phosphorus in diamond. Furthermore, this good agreement allowed us to propose accurate values of the electron effective masses (m(perpendic ular to) and m(parallel to)) and of the optical ionisation energy. A correl ation between the electron mobility and the broadening of the phosphorus ex cited states was observed among the samples, giving new insights on the pro cesses reducing the electron mobility. (C) 2001 Elsevier Science B.V. All r ights reserved.