Phonon-assisted electronic transitions in phosphorus-doped n-type chemicalvapor deposition diamond films

Citation
K. Haenen et al., Phonon-assisted electronic transitions in phosphorus-doped n-type chemicalvapor deposition diamond films, DIAM RELAT, 10(3-7), 2001, pp. 439-443
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
439 - 443
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<439:PETIPN>2.0.ZU;2-T
Abstract
One year ago we published the first results on the electronic structure of the P-level in 1000 ppm PH3/CH4 doped {111}-oriented n-type diamond films, using the quasi-steady-state photocurrent technique (PC) and photothermal i onization spectroscopy (PTIS). In this work we have extended our measuremen ts at various temperatures (4.2-77.4 K) to samples with various doping leve ls (100, 500 and 1000 ppm PH3/CH4). This allowed us to obtain more precise results for the electronic structure of the phosphorus defect in homoepitax ial n-type CVD diamond films, making use of the 155 meV LO-phonon to explai n the oscillatory photoconductivity. These results are confirmed by the PTI S maxima and Fourier transform infra-red (FTIR) data. In addition we presen t first measurements on a 2000-ppm doped {100}-oriented sample. (C) 2001 El sevier Science B.V. Ah rights reserved.