Hydrogen-acceptor interactions in diamond

Citation
J. Chevallier et al., Hydrogen-acceptor interactions in diamond, DIAM RELAT, 10(3-7), 2001, pp. 399-404
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
399 - 404
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<399:HIID>2.0.ZU;2-H
Abstract
Hydrogen-acceptor interactions are investigated in boron-doped diamond thro ugh deuterium diffusion experiments followed by SIMS measurements and throu gh infrared absorption spectroscopy. From deuterium diffusion, we show that B-D interactions can be properly demonstrated in low compensation B-doped homoepitaxial layers. However, the presence of defects in such layers stron gly affects this interaction. The degree of passivation of boron accepters by deuterium depends on the diffusion temperature. At 550 degreesC or below , the B and D concentrations exactly match giving rise to a complete disapp earance of the absorption bands related to the electronic transitions of ne utral baron accepters. Under thermal annealing above 500 degreesC, (B,D) pa irs dissociate and neutral boron accepters recover. At deuterium diffusion temperatures of 700 degreesC, the B passivation is absent. (C) 2001 Elsevie r Science B.V. All rights reserved.