Detection of C-2 radicals in low-pressure inductively coupled plasma source for diamond chemical vapor deposition

Citation
T. Shiomi et al., Detection of C-2 radicals in low-pressure inductively coupled plasma source for diamond chemical vapor deposition, DIAM RELAT, 10(3-7), 2001, pp. 388-392
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
388 - 392
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<388:DOCRIL>2.0.ZU;2-1
Abstract
The C-2 radical density was measured in a low-pressure, radio frequency (rf ), inductively coupled plasma (ICP) employing a CH3OH/H-2/H2O mixture. Meas urement was carried out under the conditions where predominantly diamond ca n be formed. At the typical growth conditions for the low-pressure, rf ICP reactor used for diamond formation, the C-2 radical density in the ICP regi on was of the order of 10(13) cm(-3). The correlation between the C-2 radic al density and the quality of diamond films was investigated. (C) 2001 Else vier Science B.V. All rights reserved.