Direct evidence for implanted Fe on substitutional Ga sites in GaN

Citation
U. Wahl et al., Direct evidence for implanted Fe on substitutional Ga sites in GaN, APPL PHYS L, 78(21), 2001, pp. 3217-3219
Citations number
24
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
78
Issue
21
Year of publication
2001
Pages
3217 - 3219
Database
ISI
SICI code
0003-6951(20010521)78:21<3217:DEFIFO>2.0.ZU;2-G
Abstract
The lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60 ke V room temperature implantation of the precursor isotope Mn-59 at a dose of 1.0x10(13) cm(-2) and annealing up to 900 degreesC, the angular distributi on of beta (-) particles emitted by the radioactive isotope Fe-59 was measu red by a position-sensitive electron detector. The beta (-) emission patter ns around the [0001], [(1) under bar 102], [(1) under bar 101], and [(2) un der bar 113] directions give direct evidence that the majority of Fe (80%) occupies substitutional Ga sites. (C) 2001 American Institute of Physics.