T. Ngai et al., Transconductance improvement in surface-channel SiGe p-metal-oxide-siliconfield-effect transistors using a ZrO2 gate dielectric, APPL PHYS L, 78(20), 2001, pp. 3085-3087
Silicon and surface-channel SiGe p-metal-oxide-silicon field-effect transis
tors (p-MOSFETs) using a ZrO2 gate dielectric with equivalent oxide thickne
ss (EOT) less than 20 A was fabricated. These p-MOSFETs show similar behavi
or to that of other high-k gate dielectric p-MOSFETs reported in the litera
ture, and mobility enhancement is observed in the surface-channel SiGe p-MO
SFETs. (C) 2001 American Institute of Physics.