Transconductance improvement in surface-channel SiGe p-metal-oxide-siliconfield-effect transistors using a ZrO2 gate dielectric

Citation
T. Ngai et al., Transconductance improvement in surface-channel SiGe p-metal-oxide-siliconfield-effect transistors using a ZrO2 gate dielectric, APPL PHYS L, 78(20), 2001, pp. 3085-3087
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
78
Issue
20
Year of publication
2001
Pages
3085 - 3087
Database
ISI
SICI code
0003-6951(20010514)78:20<3085:TIISSP>2.0.ZU;2-S
Abstract
Silicon and surface-channel SiGe p-metal-oxide-silicon field-effect transis tors (p-MOSFETs) using a ZrO2 gate dielectric with equivalent oxide thickne ss (EOT) less than 20 A was fabricated. These p-MOSFETs show similar behavi or to that of other high-k gate dielectric p-MOSFETs reported in the litera ture, and mobility enhancement is observed in the surface-channel SiGe p-MO SFETs. (C) 2001 American Institute of Physics.