Formation mechanism and energy levels of GaN six-bilayer periodic structures grown on GaAs(001) - art. no. 165319

Citation
M. Funato et al., Formation mechanism and energy levels of GaN six-bilayer periodic structures grown on GaAs(001) - art. no. 165319, PHYS REV B, 6316(16), 2001, pp. 5319
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
0163-1829 → ACNP
Volume
6316
Issue
16
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010415)6316:16<5319:FMAELO>2.0.ZU;2-E
Abstract
The formation mechanism and energy levels of six-bilayer periodic structure s in GaN on GaAs(001), which we found recently [Appl. Phys. Lett. 76, 330 ( 2000)], are investigated. Transmission electron microscopy suggests that th e periodicity originates at valleys formed by zinc-blende (ZB) and wurtzite (W) phases, and develops along the ZB-(111)A direction. On the basis of th is observation, we propose that the competition between ZB and W phases dur ing the growth is a driving force for the formation of the periodic structu res. From the six-bilayer periodic structures, photoluminescence is observe d at 20 K, and its peak position agrees well with a calculation based on th e Kronig-Penney model, in which the periodic structures are regarded as ZB/ W superlattices.