Uniformly and selectively doped silicon : erbium structures produced by the sublimation MBE method

Citation
M. Stepikhova et al., Uniformly and selectively doped silicon : erbium structures produced by the sublimation MBE method, MAT SCI E B, 81(1-3), 2001, pp. 67-70
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
81
Issue
1-3
Year of publication
2001
Pages
67 - 70
Database
ISI
SICI code
0921-5107(20010424)81:1-3<67:UASDS:>2.0.ZU;2-K
Abstract
Si:Er structures produced by an original sublimation MBE method demonstrate intense Er-related luminescence at 1.54 mum both 'as grown' and after anne aling procedure. In this contribution we discuss the peculiarities of forma tion of optically active Er centers in these materials and their transforma tion behavior depending on the growth and annealing conditions. The photolu minescence features of uniformly Er-doped layers and of the specific select ively doped structures consisting of many periods of Si and Si:Er layers wi th the thicknesses down to 20 Angstrom are described. A remarkable high lum inescence efficiency of the selectively doped multi-layer structures as com pared to the uniformly doped is pointed out. (C) 2001 Elsevier Science B.V. All rights reserved.