Si:Er structures produced by an original sublimation MBE method demonstrate
intense Er-related luminescence at 1.54 mum both 'as grown' and after anne
aling procedure. In this contribution we discuss the peculiarities of forma
tion of optically active Er centers in these materials and their transforma
tion behavior depending on the growth and annealing conditions. The photolu
minescence features of uniformly Er-doped layers and of the specific select
ively doped structures consisting of many periods of Si and Si:Er layers wi
th the thicknesses down to 20 Angstrom are described. A remarkable high lum
inescence efficiency of the selectively doped multi-layer structures as com
pared to the uniformly doped is pointed out. (C) 2001 Elsevier Science B.V.
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