Low loss and high extinction ratio strictly nonblocking 16 x 16 thermooptic matrix switch on 6-in wafer using silica-based planar lightwave circuit technology

Citation
T. Goh et al., Low loss and high extinction ratio strictly nonblocking 16 x 16 thermooptic matrix switch on 6-in wafer using silica-based planar lightwave circuit technology, J LIGHTW T, 19(3), 2001, pp. 371-379
Citations number
27
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Optics & Acoustics
Journal title
JOURNAL OF LIGHTWAVE TECHNOLOGY
ISSN journal
0733-8724 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
371 - 379
Database
ISI
SICI code
0733-8724(200103)19:3<371:LLAHER>2.0.ZU;2-U
Abstract
We describe a silica-based 16 x 16 strictly nonblocking thermooptic matrix switch with a low loss and a high extinction ratio, This matrix switch, whi ch employs a double Mach-Zehnder interferometer (MZI) switching unit and a matrix arrangement to reduce the total waveguide length, is fabricated with 0.75% refractive index difference waveguides on a 6-in silicon wafer using silica-based planar lightwave circuit (PLC) technology. We obtained an ave rage insertion loss of 6.6 dB and an average extinction ratio of 53 dB in t he worst polarization case. The operating wavelength bandwidth completely c overs the gain band of practical erbium-doped fiber amplifiers (EDFAs). The total power consumption needed for operation is reduced to 17 W by employi ng a phase-trimming technique which eliminates the phase-error in the inter ferometer switching unit.