Quantum-confinement effect in ultrathin Si layer of silicon-on-insulator substrate

Citation
M. Tabe et al., Quantum-confinement effect in ultrathin Si layer of silicon-on-insulator substrate, JPN J A P 2, 40(2B), 2001, pp. L131-L133
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
2B
Year of publication
2001
Pages
L131 - L133
Database
ISI
SICI code
0021-4922(20010215)40:2B<L131:QEIUSL>2.0.ZU;2-L
Abstract
We have studied the evolution of valence-band spectra during Si layer thinn ing in a silicon-on-insulator (SOI) substrate by X-ray photoelectron spectr oscopy (XPS) in order to observe the quantum-confinement effect in two-dime nsional Si. It was clearly observed that the valence-band maximum (VBM) shi fts towards higher binding energies with decreasing Si thickness (< similar to 10nm). The VBM shifts were ascribed to vertical confinement of heavy ho les in the quantum-well structure of a vacuum/single-crystalline Si/buried amorphous SiO2.