Luminescent properties of SrAl2O4 : Eu thin films deposited by intense pulsed ion-beam evaporation

Citation
K. Kato et al., Luminescent properties of SrAl2O4 : Eu thin films deposited by intense pulsed ion-beam evaporation, JPN J A P 1, 40(2B), 2001, pp. 1038-1041
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
2B
Year of publication
2001
Pages
1038 - 1041
Database
ISI
SICI code
0021-4922(200102)40:2B<1038:LPOS:E>2.0.ZU;2-2
Abstract
SrAl2O4 activated with Eu, a long-phosphorescence material with high bright ness, has been successfully deposited on Si substrates using intense pulsed ion-beam evaporation. Efficient preparation of long-phosphorescence thin f ilms has been achieved using a high-density ablation plasma produced by the interaction of an intense pulsed ion-beam with the SrAl2O4:Eu target. The prepared SrAl2O4:Eu thin films had a polycrystalline structure without anne aling and showed a typical photoluminescence of SrAl2O4:Eu at around 520 nm . Thermoluminescence (TL) measurements were carried out in order to obtain the lifetimes of the phosphorescence. In particular, TL spectra in the high er temperature region, which contributed to the long phosphorescence, were examined by the partial heating technique to evaluate the distributed trap depths and the lifetimes. The phosphorescence lifetime at 300 K for the pre pared film was found to be about 180 min.