Preparation of SrAl2O4 : Eu phosphor thin films by intense pulsed ion-beamevaporation

Citation
M. Sengiku et al., Preparation of SrAl2O4 : Eu phosphor thin films by intense pulsed ion-beamevaporation, JPN J A P 1, 40(2B), 2001, pp. 1035-1037
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
2B
Year of publication
2001
Pages
1035 - 1037
Database
ISI
SICI code
0021-4922(200102)40:2B<1035:POS:EP>2.0.ZU;2-2
Abstract
SrAl2O4 activated with Eu phosphors has been known to exhibit high brightne ss and long-lasting phosphorescence without radioactive materials. In this paper, SrAl2O4Eu thin films have been successfully deposited on Si(100) or graphite substrates using an intense pulsed ion-beam evaporation technique. The results of X-ray diffraction and photoluminescence suggest that SrAl2O 4:Eu thin films which have a polycrystalline structure can be produced in v acuum, without substrate heating and annealing. The composition and morphol ogy of the films have been analyzed by Rutherford backscattering spectrosco py (RBS) and scanning electron microscopy (SEM). From RES analysis, we have obtained good stoichiometry between the target and the films prepared.