SrAl2O4 activated with Eu phosphors has been known to exhibit high brightne
ss and long-lasting phosphorescence without radioactive materials. In this
paper, SrAl2O4Eu thin films have been successfully deposited on Si(100) or
graphite substrates using an intense pulsed ion-beam evaporation technique.
The results of X-ray diffraction and photoluminescence suggest that SrAl2O
4:Eu thin films which have a polycrystalline structure can be produced in v
acuum, without substrate heating and annealing. The composition and morphol
ogy of the films have been analyzed by Rutherford backscattering spectrosco
py (RBS) and scanning electron microscopy (SEM). From RES analysis, we have
obtained good stoichiometry between the target and the films prepared.