Biexcitons in InxGa1-xAs/GaAs quantum wells subject to high magnetic fields - art. no. 153312

Citation
T. Baars et al., Biexcitons in InxGa1-xAs/GaAs quantum wells subject to high magnetic fields - art. no. 153312, PHYS REV B, 6315(15), 2001, pp. 3312
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
0163-1829 → ACNP
Volume
6315
Issue
15
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010415)6315:15<3312:BIIQWS>2.0.ZU;2-H
Abstract
The biexciton states in InxGa1-xAs quantum wells of varying widths have bee n studied by spectrally resolved and time-integrated four-wave mixing in ma gnetic fields up to B = 8 T. Surprisingly, the biexciton binding energy is found to be independent of the field strength. These results challenge theo retical descriptions of the biexciton wave function. Furthermore, the polar ization selection rules for the biexcitonic contributions to the four-wave mixing are left unchanged by B, in contrast to the excitonic signal.