Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy

Citation
N. Kuznetsov et al., Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 345-347
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
345 - 347
Database
ISI
SICI code
0921-5107(20010322)80:1-3<345:SRSO4L>2.0.ZU;2-0
Abstract
The surface roughness on 4H-SiC layers grown by LPE was systematically stud ied. The surface morphology was investigated by scanning electron microscop y and atomic force microscopy. Depending on the substrate orientation two d ifferent types of growth morphology were found: terraced and step flow grow th. The height of growth steps was found to depend on the angle of the subs trate off-orientation. The higher the degree of substrate off-orientation t he higher the step height. The terrace height depends on the impurity conce ntration in LPE layers. With the decrease of the impurity level, the terrac e height has been significantly decreased. (C) 2001 Elsevier Science B.V. A ll rights reserved.