Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100)

Citation
Jy. Park et al., Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100), J VAC SCI B, 19(2), 2001, pp. 523-526
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
19
Issue
2
Year of publication
2001
Pages
523 - 526
Database
ISI
SICI code
1071-1023(200103/04)19:2<523:STSOFA>2.0.ZU;2-H
Abstract
We present tunneling spectra for nanometer scale Au dots on in situ. oxidiz ed Si(100). The spectra were measured for dots fabricated on clean and oxid ized surfaces for oxide thickness from 0 to 1 ML. Two important features ar e observed. First, tunneling current-voltage spectra of the dots on the ato mically clean surfaces show metallic behavior, confirming the identificatio n of the dots as deposited Au from the tip. Second, tunneling spectra from Au dots on the partially oxidized surfaces show a feature at approximately 2 V (sample positive) with weak negative differential resistance. We associ ate this feature with oxide related defect sites which we observe at densit ies that increase from 0.06 to 0.3/nm(2) as oxide coverage increases from 0 .1 to 1 ML. The probability of observing this feature through a gold dot in creases by about a factor of 2, suggesting that the dot increases the effec tive sampling area of the defect sites by the same factor. (C) 2001 America n Vacuum Society.