Drift mobility measurements in a-SiNx : H

Citation
T. Gungor et H. Tolunay, Drift mobility measurements in a-SiNx : H, J NON-CRYST, 282(2-3), 2001, pp. 197-202
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
0022-3093 → ACNP
Volume
282
Issue
2-3
Year of publication
2001
Pages
197 - 202
Database
ISI
SICI code
0022-3093(200104)282:2-3<197:DMMIA:>2.0.ZU;2-M
Abstract
Temperature dependence of the electron drift mobility (mu (d)) in a-Si:H, a nd in a set of three a-SiNx:H alloys has been determined from the steady-st ate photoconductivity and response time measurements. The activation energy of the a-Si:H is found to be 0.11 eV and calculated drift mobility is simi lar to0.1 cm(2) V-1 s(-1) at room temperature. While the activation energy of the alloys increases up to 0.25 eV with increase of nitrogen content and for the sample with the highest N content, the room temperature drift mobi lty decreases to similar to2.4 x 10(-6) cm(2) V-1 s(-1). The results confir m that the conduction band tail broadens with an increase of nitrogen conte nt in a-SiNx:H. (C) 2001 Elsevier Science B.V. All rights reserved.