Low-voltage negative-resistance mixers of nano-meter SNS junctions

Authors
Citation
T. Matsui et H. Ohta, Low-voltage negative-resistance mixers of nano-meter SNS junctions, IEEE APPL S, 11(1), 2001, pp. 191-195
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
1051-8223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
1
Pages
191 - 195
Database
ISI
SICI code
1051-8223(200103)11:1<191:LNMONS>2.0.ZU;2-F
Abstract
The current carried by the bound quasi-particles in the N region of a mesos copic SNS junction has de and cosine components. The de current component i s carried by the pair charge (-2e) transferred by a couple of Andreev refle ctions at both of the NS interfaces. The pair-charge transfers decrease due to reduction of the allowed number, 2 Delta /V, of Andreev reflections whe n the voltage, V, increases. Therefore, the low-voltage negative-differenti al-resistance is observed on the I-V curves of mesoscopic SNS junction, whe n the junction is driven by the low impedance voltage-bias source. The supe rcurrent carried by the quasi-particle in the N-region is sensitive to the external high-frequency fields. In a mixer experiment using the nano-meter SNS junctions of NbN, prominent IF signal peaks are observed at low bias vo ltage. Each IF signal peek corresponds to the negative differential resista nce region at low bias voltage.