A 3-chamber deposition system for the simultaneous double-sided coating of5-inch wafers

Citation
J. Geerk et al., A 3-chamber deposition system for the simultaneous double-sided coating of5-inch wafers, IEEE APPL S, 11(1), 2001, pp. 3856-3858
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
1051-8223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
3
Pages
3856 - 3858
Database
ISI
SICI code
1051-8223(200103)11:1<3856:A3DSFT>2.0.ZU;2-5
Abstract
We describe a sputtering system which allows the simultaneous deposition of HTS films on both sides of wafers up to 5-inch diameter. The system consis ts of three deposition chambers in a row to cover a wafer on both sides sim ultaneously with three different films, such as a buffer layer, a HTS film and a contact layer. We present data on the performance of the system, such as temperature homogeneity at the substrate Location, the lateral distribu tion in film thickness and composition, and the properties of the deposited HTS films, on which we measured the critical current density, the field de pendence of the surface resistance and the performance of stripline and dis k resonators and filters.