Effect of sputtering induced oxygen plasma on recovery of EuBa2Cu3Ox films

Citation
O. Michikami et al., Effect of sputtering induced oxygen plasma on recovery of EuBa2Cu3Ox films, IEEE APPL S, 11(1), 2001, pp. 3197-3200
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
1051-8223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
3
Pages
3197 - 3200
Database
ISI
SICI code
1051-8223(200103)11:1<3197:EOSIOP>2.0.ZU;2-O
Abstract
Activated oxygen plasma (AOP) annealing has been proposed as a recovery tre atment in a decompressed oxygen atmosphere. As-sputtered EuBa2Cu3O7 (EBCO) thin films with a T-c endpoint (T-ce) of 90 K were used for deterioration a nd recovery treatments. The removal and recovery for oxygen atoms was clari fied from in-situ measurements of electrical resistance (R). The AOP anneal ing had a better recovery effect than pure oxygen annealing. AOP recovery c onditions of annealing temperature (T-sa) of 450-700 degreesC, plasma expos ure and annealing time (t(p)) of more than 40 min, and oxygen pressure (Po- 2((pc))) of more than 200 Pa were found to be appropriate. The AOP diffused around to the back side of a shutter, even one of 15 cm in radius, and dif fused to a gap distance of 0.1 cm between the dim and the shutter, restorin g the degraded films to the high-quality characteristics.