Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy

Citation
A. Gruverman et al., Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy, APPL PHYS L, 78(18), 2001, pp. 2751-2753
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
78
Issue
18
Year of publication
2001
Pages
2751 - 2753
Database
ISI
SICI code
0003-6951(20010430)78:18<2751:ANSIFT>2.0.ZU;2-F
Abstract
Scanning force microscopy (SFM) has been used to perform nanoscale studies of the switching behavior of Pb(Zr, Ti)O-3 thin films via the direct observ ation of their domain structures. The study revealed a significant asymmetr y of a switching pattern which is a function of the voltage polarity and or iginal domain structure of individual grains. The phenomenon of asymmetric switching is attributed (1) to the presence of an internal built-in electri c field at the bottom interface and (2) to the mechanical stress exerted by the SFM tip. The former effect results in incomplete 180 degrees switching , while the latter effect leads to a 90 degrees rotation of the polarizatio n vector. The resulting shear stress deformation of the grain underneath th e tip combined with the applied field effect propels polarization reversal in the adjacent grains. (C) 2001 American Institute of Physics.