Cu-CMP for dual damascene technology: Prestonian vs. non-Prestonian regimes of Cu removal

Authors
Citation
Y. Gotkis et S. Guha, Cu-CMP for dual damascene technology: Prestonian vs. non-Prestonian regimes of Cu removal, J ELEC MAT, 30(4), 2001, pp. 396-399
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
0361-5235 → ACNP
Volume
30
Issue
4
Year of publication
2001
Pages
396 - 399
Database
ISI
SICI code
0361-5235(200104)30:4<396:CFDDTP>2.0.ZU;2-X
Abstract
Dual damascene Cu (Cu2D) is increasingly becoming the process of choice for IC technology. The Cu2D manufacturing sequence includes multiple use of CM P for both dielectric planarization and for shaping Cu interconnects, there by making CMP an enabling operation. The performance of Cu-CMP has been obs erved to be slurry-dependent; while slurries typically exhibit the expected Prestonian behavior, i.e., a linear dependence of removal rate on pressure and speed, some slurries exhibit deviation from this linear behavior, espe cially at higher pressures . Such slurries are usually referred to as press ure-sensitive slurries. This paper analyzes a general scheme for Cu removal mechanism and explores the possible reasons behind the non-Prestonian anom aly.