Realization of gated field emitters for electrophotonic applications usingcarbon nanotube line emitters directly grown into submicrometer holes

Citation
Yh. Lee et al., Realization of gated field emitters for electrophotonic applications usingcarbon nanotube line emitters directly grown into submicrometer holes, ADVAN MATER, 13(7), 2001, pp. 479
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
0935-9648 → ACNP
Volume
13
Issue
7
Year of publication
2001
Database
ISI
SICI code
0935-9648(20010404)13:7<479:ROGFEF>2.0.ZU;2-5
Abstract
Carbon nanotube field emission pixels with gate electrodes are reported to have been fabricated for the first time. The interesting electronic applica tion of carbon nanotubes (CNTs) as field electron emitters had not been rea lized previously because of the difficulty of achieving precisely controlle d selective growth of CNTs within a hole of diameter -1 mum (see Figure). [GRAPHICS]