In situ XPS investigations of ion beam hydrogenation of CuInSe2

Citation
K. Otte et al., In situ XPS investigations of ion beam hydrogenation of CuInSe2, THIN SOL FI, 387(1-2), 2001, pp. 185-188
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
387
Issue
1-2
Year of publication
2001
Pages
185 - 188
Database
ISI
SICI code
0040-6090(20010529)387:1-2<185:ISXIOI>2.0.ZU;2-F
Abstract
The long term change of the CuInSe2 surface composition under low energy hy drogen ion beam implantation at an increased substrate temperature was stud ied with in situ X-ray photoelectron spectroscopy (XPS). A removal of surfa ce oxides as well as of surface contaminations due to the treatment could b e observed. After storage in air, no reformation of oxides, such as SeO2 an d In2O3, was detected. Ion beam hydrogenation causes considerable post-grow th changes in the defect population. Initially in p-type CuInSe2, the dista nce between the valence band maximum (VBM) and the Fermi level increased. A reactivation of oxygen-passivated V-Se, the production of additional selen ium vacancies as well as changes in the active V-Cu population, might expla in these observations. At elevated substrate temperatures, the hydrogen ion beam produces an In-rich surface near to Cu2In4Se7 with a slightly reduced Se-content, independent of the initial surface composition. (C) 2001 Elsev ier Science B.V. All rights reserved.