Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction

Citation
H. Ouacha et al., Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction, SEMIC SCI T, 16(4), 2001, pp. 255-259
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
0268-1242 → ACNP
Volume
16
Issue
4
Year of publication
2001
Pages
255 - 259
Database
ISI
SICI code
0268-1242(200104)16:4<255:CBTNPO>2.0.ZU;2-E
Abstract
The noise properties of Pt/p-Si1-xGex and PtSi/p-Si1-xGex (x = 0.14) Schott ky contacts have been studied. The silicide layer PtSi was formed by therma l reaction (TR) of Pt with a silicon substrate and by co-sputtering (CS) of Pt and Si onto the strained Si1-xGex layer. The noise measurements were pe rformed at temperature T = 77 K over the frequency range 10-10(4) Hz, Highe r noise level was observed in the annealed diode Pt/p-Si1-xGex. In both dio des, the noise was found to exhibit l/f behaviour and was attributed to flu ctuations of the generation-recombination current at the interface states. The results reveal significant reductions in the total noise by 70%, and th e interface state density Ni, by three orders of magnitude when the silicid e is formed by the CS process.