Excitonic states in In(Ga)As self-assembled quantum dots

Citation
M. Bayer et al., Excitonic states in In(Ga)As self-assembled quantum dots, PHYS ST S-B, 224(2), 2001, pp. 331-336
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
0370-1972 → ACNP
Volume
224
Issue
2
Year of publication
2001
Pages
331 - 336
Database
ISI
SICI code
0370-1972(200103)224:2<331:ESIISQ>2.0.ZU;2-M
Abstract
We have studied the excitonic absorption of single In(Ga)As self-assembled quantum dots by photoluminenscence excitation spectroscopy. We find that th e absorption spectrum varies drastically with the symmetry of the dot struc tures: the lower the symmetry is, the more complicated is the structure of the excitonic absorption. For dots of high symmetry we demonstrate that the mixing of quantum configurations by two-body interactions in the electron- hole complex leads to distinct absorption spectra controlled by the number of confined electronic shells.