A formation of cobalt silicide on silicon field emitter arrays by electrical stress

Citation
Jd. Lee et al., A formation of cobalt silicide on silicon field emitter arrays by electrical stress, IEEE ELEC D, 22(4), 2001, pp. 173-175
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
0741-3106 → ACNP
Volume
22
Issue
4
Year of publication
2001
Pages
173 - 175
Database
ISI
SICI code
0741-3106(200104)22:4<173:AFOCSO>2.0.ZU;2-B
Abstract
A novel process utilizing electrical stress is proposed for the formation o f Co silicide on single crystal silicon (c-Si) FEAs to improve the held emi ssion characteristics. Co silicide FEAs formed by electrical stress (ES) ex hibited a significant improvement in turn-on voltage and emission current c ompared with c-Si FEAs. The improvement mainly comes from the lower effecti ve work function of Co silicide and less blunting of tips during silicidati on by electrical stress in an ultra high vacuum (UHV) environment less than 10(-8) torr.