Spherical growth and surface-quasifree vibrations of Si nanocrystallites in Er-doped Si nanostructures

Citation
Xl. Wu et al., Spherical growth and surface-quasifree vibrations of Si nanocrystallites in Er-doped Si nanostructures, PHYS REV L, 86(14), 2001, pp. 3000-3003
Citations number
31
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
0031-9007 → ACNP
Volume
86
Issue
14
Year of publication
2001
Pages
3000 - 3003
Database
ISI
SICI code
0031-9007(20010402)86:14<3000:SGASVO>2.0.ZU;2-8
Abstract
Si-based Er-doped Si nanostructures were fabricated for exploring efficient light emission from Er ions and Si nanocrystallites. High-resolution trans mission electron microscopy observations reveal that Si nanocrystallites ar e spherically embedded in the SiO2 matrix. Energy-dispersive x-ray analysis indicates that the Er centers are distributed at the surfaces of nanocryst allites surrounded by the SiO2 matrix. Low-frequency Raman scattering inves tigation shows that Lamb's theory can be adopted to exactly calculate the s urface vibration frequencies from acoustic phonons confined in spherical Si nanocrystallites and the matrix effects are negligible.